ReP USP - Resultado da busca

Trabalho de evento
Influence of interface trap density on vertical NW-TFETs with different source composition (2013)
Martino, João Antonio ; Souza, Felipe Neves; Agopian, Paula Ghedini Der ; Rooyackers, Rita; Vandooren, A.; Simoen, Eddy ; Claeys, Cor
Source: EUROSOI 2013. Conference titles: European Workshop on Silicon on Insulator Technology, Devices and Circuits. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
MARTINO, João Antonio et al. Influence of interface trap density on vertical NW-TFETs with different source composition. 2013, Anais.. Paris: Institut Superieur d'Électronique, 2013. . Acesso em: 30 abr. 2024.
APA
Martino, J. A., Souza, F. N., Agopian, P. G. D., Rooyackers, R., Vandooren, A., Simoen, E., & Claeys, C. (2013). Influence of interface trap density on vertical NW-TFETs with different source composition. In EUROSOI 2013. Paris: Institut Superieur d'Électronique.
NLM
Martino JA, Souza FN, Agopian PGD, Rooyackers R, Vandooren A, Simoen E, Claeys C. Influence of interface trap density on vertical NW-TFETs with different source composition. EUROSOI 2013. 2013 ;[citado 2024 abr. 30 ]
Vancouver
Martino JA, Souza FN, Agopian PGD, Rooyackers R, Vandooren A, Simoen E, Claeys C. Influence of interface trap density on vertical NW-TFETs with different source composition. EUROSOI 2013. 2013 ;[citado 2024 abr. 30 ]
Artigo de periodico
Nanowire Tunnel Field Effect Transistors at High Temperature (2013)
Martino, Márcio Dalla Valle; Neves, Felipe Souza; Agopian, Paula Ghedini Der ; Martino, João Antonio ; Rooyackers, Rita; Claeys, Cor
Source: Journal of Integrated Circuits and Systems. Unidade: EP
Assunto: NANOELETRÔNICA
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ABNT
MARTINO, Márcio Dalla Valle et al. Nanowire Tunnel Field Effect Transistors at High Temperature. Journal of Integrated Circuits and Systems, v. 8, n. 2, p. 110-115, 2013Tradução . . Disponível em: https://doi.org/10.29292/jics.v8i2.381. Acesso em: 30 abr. 2024.
APA
Martino, M. D. V., Neves, F. S., Agopian, P. G. D., Martino, J. A., Rooyackers, R., & Claeys, C. (2013). Nanowire Tunnel Field Effect Transistors at High Temperature. Journal of Integrated Circuits and Systems, 8( 2), 110-115. doi:10.29292/jics.v8i2.381
NLM
Martino MDV, Neves FS, Agopian PGD, Martino JA, Rooyackers R, Claeys C. Nanowire Tunnel Field Effect Transistors at High Temperature [Internet]. Journal of Integrated Circuits and Systems. 2013 ;8( 2): 110-115.[citado 2024 abr. 30 ] Available from: https://doi.org/10.29292/jics.v8i2.381
Vancouver
Martino MDV, Neves FS, Agopian PGD, Martino JA, Rooyackers R, Claeys C. Nanowire Tunnel Field Effect Transistors at High Temperature [Internet]. Journal of Integrated Circuits and Systems. 2013 ;8( 2): 110-115.[citado 2024 abr. 30 ] Available from: https://doi.org/10.29292/jics.v8i2.381
Trabalho de evento
Experimental comparison between tensile and compressive uniaxially stressed MuGFETs under X-ray radiation (2013)
Martino, João Antonio ; Agopian, Paula Ghedini Der ; Peruzzi, V. V.; Gimenez, Salvador Pinillos ; Silveira, M. A. G.; Simoen, Eddy ; Claeys, Cor
Source: EUROSOI 2013. Conference titles: European Workshop on Silicon on Insulator Technology, Devices and Circuits. Unidade: EP
Assunto: MICROELETRÔNICA (CONGRESSOS)
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MARTINO, João Antonio et al. Experimental comparison between tensile and compressive uniaxially stressed MuGFETs under X-ray radiation. 2013, Anais.. Paris: Institut Superieur d'Électronique, 2013. . Acesso em: 30 abr. 2024.
APA
Martino, J. A., Agopian, P. G. D., Peruzzi, V. V., Gimenez, S. P., Silveira, M. A. G., Simoen, E., & Claeys, C. (2013). Experimental comparison between tensile and compressive uniaxially stressed MuGFETs under X-ray radiation. In EUROSOI 2013. Paris: Institut Superieur d'Électronique.
NLM
Martino JA, Agopian PGD, Peruzzi VV, Gimenez SP, Silveira MAG, Simoen E, Claeys C. Experimental comparison between tensile and compressive uniaxially stressed MuGFETs under X-ray radiation. EUROSOI 2013. 2013 ;[citado 2024 abr. 30 ]
Vancouver
Martino JA, Agopian PGD, Peruzzi VV, Gimenez SP, Silveira MAG, Simoen E, Claeys C. Experimental comparison between tensile and compressive uniaxially stressed MuGFETs under X-ray radiation. EUROSOI 2013. 2013 ;[citado 2024 abr. 30 ]
Artigo de periodico
Stress engineering and proton radiation influence on off-state leakage current in triple-gate SOI devices (2013)
Agopian, Paula Ghedini Der ; Bordallo, Caio Cesar Mendes ; Simoen, Eddy ; Martino, João Antonio ; Claeys, Cor
Source: Solid-State Electronics Volume 90, December 2013, Pages 155-159. Unidade: EP
Subjects: SILÍCIO, IRRADIAÇÃO
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ABNT
AGOPIAN, Paula Ghedini Der et al. Stress engineering and proton radiation influence on off-state leakage current in triple-gate SOI devices. Solid-State Electronics Volume 90, December 2013, Pages 155-159, v. 90, p. 155-159, 2013Tradução . . Disponível em: https://doi.org/10.1016/j.sse.2013.02.037. Acesso em: 30 abr. 2024.
APA
Agopian, P. G. D., Bordallo, C. C. M., Simoen, E., Martino, J. A., & Claeys, C. (2013). Stress engineering and proton radiation influence on off-state leakage current in triple-gate SOI devices. Solid-State Electronics Volume 90, December 2013, Pages 155-159, 90, 155-159. doi:10.1016/j.sse.2013.02.037
NLM
Agopian PGD, Bordallo CCM, Simoen E, Martino JA, Claeys C. Stress engineering and proton radiation influence on off-state leakage current in triple-gate SOI devices [Internet]. Solid-State Electronics Volume 90, December 2013, Pages 155-159. 2013 ; 90 155-159.[citado 2024 abr. 30 ] Available from: https://doi.org/10.1016/j.sse.2013.02.037
Vancouver
Agopian PGD, Bordallo CCM, Simoen E, Martino JA, Claeys C. Stress engineering and proton radiation influence on off-state leakage current in triple-gate SOI devices [Internet]. Solid-State Electronics Volume 90, December 2013, Pages 155-159. 2013 ; 90 155-159.[citado 2024 abr. 30 ] Available from: https://doi.org/10.1016/j.sse.2013.02.037
Artigo de periodico
Experimental Comparison Between Trigate p-TFET and p-FinFET Analog Performance as a Function of Temperature (2013)
Agopian, Paula Ghedini Der ; Simoen, Eddy ; Vandooren, A; Rooyackers, Rita; Martino, João Antonio
Source: IEEE Transactions on Electron Devices. Unidade: EP
Subjects: AVALIAÇÃO DE DESEMPENHO, TRANSISTORES
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ABNT
AGOPIAN, Paula Ghedini Der et al. Experimental Comparison Between Trigate p-TFET and p-FinFET Analog Performance as a Function of Temperature. IEEE Transactions on Electron Devices, v. 60, n. 8, p. 2493-2497, 2013Tradução . . Disponível em: https://doi.org/10.1109/ted.2013.2267614. Acesso em: 30 abr. 2024.
APA
Agopian, P. G. D., Simoen, E., Vandooren, A., Rooyackers, R., & Martino, J. A. (2013). Experimental Comparison Between Trigate p-TFET and p-FinFET Analog Performance as a Function of Temperature. IEEE Transactions on Electron Devices, 60( 8), 2493-2497. doi:10.1109/ted.2013.2267614
NLM
Agopian PGD, Simoen E, Vandooren A, Rooyackers R, Martino JA. Experimental Comparison Between Trigate p-TFET and p-FinFET Analog Performance as a Function of Temperature [Internet]. IEEE Transactions on Electron Devices. 2013 ; 60( 8): 2493-2497.[citado 2024 abr. 30 ] Available from: https://doi.org/10.1109/ted.2013.2267614
Vancouver
Agopian PGD, Simoen E, Vandooren A, Rooyackers R, Martino JA. Experimental Comparison Between Trigate p-TFET and p-FinFET Analog Performance as a Function of Temperature [Internet]. IEEE Transactions on Electron Devices. 2013 ; 60( 8): 2493-2497.[citado 2024 abr. 30 ] Available from: https://doi.org/10.1109/ted.2013.2267614

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